A Kinetic Mechanism for the Transformation of Single Layer Steps into Double Layer Steps by Si Deposition on a Vicinal Si(100) Surface
Abstract
We perform energy calculations with the Stillinger-Weber potential to determine: (a) how the Si atoms depositions on a Si(100) surface with single layer steps migrate to produce a surface with double layer steps; and (b) why the system does not evolve by the usual step flow mechanism.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1992
- Accession Number
- ADA252059
Entities
People
- H. Metiu
- Yao Lu
- Zhicai Zhang
Organizations
- University of California, Santa Barbara