Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and their Characterization

Abstract

Research concerned with the atomic layer epitaxy (ALE) of silicon carbide (SiC), diamond (C) and cerium dioxide (CeO2) has been conducted within this reporting period. Equipment for the deposition of each of these materials, as well as experimental procedures for the conduct of the studies are in various stages of design, development and employment. Layer-by-layer deposition of Si and C from the precursors Of Si2H6 and C2H4, respectively, and the resulting deposition of monocrystalline beta-SiC (100) has been achieved on Si(100) substrates. Rotation of the heated (820-980 deg C) sample under the individual source gases and a heated W filament located between these gases allowed a monolayer/cycle deposition to be achieved. Surface science related equipment and associated ultra-high vacuum systems are now being assembled to investigate and determine the chemical routes to achieve ALE of SiC by self-terminating chemical adsorption. Hexamethyldisilane species have been introduced into a hot filament CVD system in an attempt to nucleate diamond on an atomic scale on silicon substrate surfaces. The organosilicic layer formed was characterized by x-ray diffraction, Auger and x-ray photoelectron spectroscopies. The subsequent diamond nucleation and growth under various conditions was investigated. It is found that the nucleation density is very high under reverse dc biasing conditions. The structure of these particles is diamond-like in nature as revealed by Raman spectroscopy and scanning electron microscopy. Atomic layer epitaxy (ALE), Auger spectroscopy, Cerium dioxide, Diamond, Forward scattering, Silicon, Silicon carbide, Temperature programmed desorption, X-ray photoelectron spectroscopy.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1992
Accession Number
ADA252352

Entities

People

  • Jeffrey T Glass
  • Nadia El-masry
  • Robert F Davis
  • Salah Bedair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Auger Electrons
  • Chemical Analysis
  • Chemistry
  • Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Materials
  • Materials Science
  • Scattering
  • Silicon Carbide
  • Spectra
  • Spectroscopy
  • Thin Films
  • X Ray Photoelectron Spectroscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene