Gallium Arsenide Pilot Line for High Performance Components

Abstract

This contractor for a Gallium Arsenide Pilot Line for High Performance Components was awarded to AT and T in March, 1987. The program goal was to develop a complete facility for fabricating GaAs memory and logic chips. To meet this goal, we provided a User-Friendly CAD system, a self-aligned GaAs E/D heterostructure FET technology, and a facility for fabricating GaAs circuits on 3 wafers. We designed and fabricated several process tester circuits, two 4K SRAMs and six 3000-5000 gate logic circuits. This Final Report describes the accomplishments of the program. Besides this overview, the Report is divided into four sections: Circuit Designs, Design Tools, and Test Results; Pilot Production and Process Development; Radiation Hardness and Reliability; and Lessons Learned During the Contract. Also, there are four appendices: the Pilot Line III Design Rules, Process Control Modules, the Advanced Technology, and the industry Survey of Availability High-Speed Packages.

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Document Details

Document Type
Technical Report
Publication Date
May 28, 1992
Accession Number
ADA252355

Entities

People

  • J. L. Sullivan
  • Robert C. Vehse

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Application Software
  • Computer Programming
  • Computers
  • Data Analysis
  • Databases
  • Failure Mode And Effect Analysis
  • Geometric Forms
  • Information Science
  • Logic Gates
  • Manufacturing
  • Mass Spectrometry
  • Operating Systems
  • Photolithography
  • Plastic Explosives
  • Semiconductors
  • Test And Evaluation
  • Wiring Diagrams

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics