Optimization of Resonant Interband Tunnel Devices
Abstract
We have carried out analytical and numerical studies of resonant interband tunneling. The numerical methods implement a 2 band model, consisting of the conduction band and a single valence band. The valence band can be considered to be the light holes. The numerical methods are described in detail, and can be applied to multiband models too. Analytic estimates are made of the thermionic currents, the of effect of stress, and other physical effects not included in the numerical models. The devices simulated are closely modeled after a set of Resonant Interband Tunnel Diodes fabricated at the Varian Research Center in Palo Alto California. Comparison of the measured and computed results show that our simulator predicts the maximal currents to within a factor of two, for devices with maximal currents varying by a factor of 1000. There are systematic differences which are likely to be due to the very high doping used in the devices. Finally, we describe a graphic user interface, implemented for our device simulator, and a Mathematica package for carrying out symbolic computations upon the operators of the Luttinger model and related multiband models of semiconductors.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 19, 1992
- Accession Number
- ADA252401
Entities
People
- Mark F. Sweeny