Atomic Force Microscope Studies of CuCl Island Formation on CaF2 (111) Substrates

Abstract

We have grown by molecular beam epitaxy (MBE) CuCl thin films at various thickness and substrate temperatures on CaF2 (111) substrates. Atomic Force Microscope (AFM) topographs reveal that islanding is the dominant growth mechanism. Quantitative analysis of the AFM data enabled us to determine the amount of the substrate remaining exposed after the deposition as well as the total amount of CuCl deposited We calculated the reciprocal-space height correlation function <h(q,t)2>, for each of our films and compared them to the predictions of the Shadowing Growth Theory, which enabled us to extract the important kinetic parameter of surface diffusion length for the growth condition of each of the four films.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 20, 1992
Accession Number
ADA252499

Entities

People

  • A. Yanase
  • E. J. Snyder
  • M. S. Anderson
  • R. S. Willims
  • W. M. Tong
  • Y. Segawa

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • California
  • Chemistry
  • Differential Equations
  • Distribution Functions
  • Energy
  • Epitaxial Growth
  • Equations
  • Films
  • Jet Propulsion
  • Materials
  • Materials Science
  • Microscopes
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Substrates
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Space