Evidence for the Dependence of the Sputter Yield of Graphite on Ion Bombardment Fluence

Abstract

The scanning tunneling microscope (STM) and the atomic force microscope (AFM) were both used to study the evolution of the morphology of graphite (0001) surfaces etched with 5 keV Ar+ ions as a function of both ion beam flux and fluence. STM and AFM topographs collected after ion beam exposure show surface features that increase in average size as a function of ion beam fluence, but which have a non-monotonic dependence on ion beam flux. Furthermore, the surface roughness does not follow a square root dependence with respect to the ion fluence, as expected for a stochastic process. One explanation for this behavior is that the sputter yield for graphite is a function of the ion beam fluence.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 31, 1992
Accession Number
ADA252500

Entities

People

  • D. A. Baugh
  • E. A. Eklund
  • E. J. Snyder
  • M. S. Anderson
  • R. Stanley Williams

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • California
  • Electron Microscopes
  • Experimental Data
  • Graphitic Materials
  • Ion Beams
  • Ion Bombardment
  • Materials
  • Microscopes
  • Microscopy
  • Military Research
  • Numbers
  • Physics
  • Scanning Electron Microscopes
  • Square Roots
  • Standards
  • Stochastic Processes
  • United States

Fields of Study

  • Physics

Readers

  • Statistical inference.
  • Thin Film Deposition Science.