GaAs Heterojunction Device Based A/D Converter Development

Abstract

This final report summarizes the technical work performed on the development of a GaAs Heterojunction analog-to-digital converter. The program goal was to develop a 12 bit 20 Msps, <1 Watt/20 Msps ADC implemented as a single monolithic chip or at most 2 chips. The part developed on this program is a single chip monolithic GaAs Heterojunction Bipolar Transistor (HBT) ADC that includes a samole-and-hold (S/H) and all of the active circuitry required for stand alone operation. The ADC development was taken to the point of fabricating one lot of 3 wafers, wafer probing, and packaging a few of the best candidate ADCS. Yield on the first (and only) lot was 18% for 4 MBE wafers. Three MOCVD wafers had low beta and were not finished. Several parts were packaged. Electrical trimming was accomplished on the first 5 most significant bits (msbs) and triangle and sine waveforms processed through the ADC. The chip demonstrated the highest reported SNR of 49.7 dB for a GaAs ADC (8 bit theoretical SNR=49. 9DB).

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1992
Accession Number
ADA252644

Entities

People

  • Clark Custer
  • Ken De Graaf
  • Stacey Bui

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Converters
  • Electronics
  • Electronics Industry
  • Electronics Laboratories
  • Geometry
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Materials
  • Metal-Semiconductor Junctions
  • Monolithic Microwave Integrated Circuits
  • Photolithography
  • Power Electronics
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Radio communications and signal processing.
  • Semiconductor Device Technology