Growth Kinetics of (100), (110), and (111) Homoepitaxial Diamond Films
Abstract
Diamond film growth by chemical vapor deposition (CVD) has burgeoned rapidly during the past decade, accompanied by considerable progress in fundamental understanding. Particular progress has been made in understanding chemistry taking place in the gas phase above the substrate and in identification of the precuror(s) primarily responsible for growth, but the details of reactions taking place on the growing surface are as yet unknown. However, despite the commercial importance of high growth rates and the potential for gaining insight into the details of the growth mechanism, only a handful of studies of the growth kinetics of polycrystalline diamond films have been reported.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 29, 1992
- Accession Number
- ADA252854
Entities
People
- C. J. Chu
- J. L. Margrave
- M. P. D'evelyn
- R. H. Hauge
Organizations
- Rice University