Novel Method for Chemical Vapor Deposition and Atomic Layer Epitaxy Using Radical Chemistry

Abstract

A novel method for chemical vapor deposition and atomic layer epitaxy using radical precursors under high vacuum conditions is being developed. The combination of selectively-generated radicals and high vacuum is ideal for low-temperature growth: growth rates remain relatively high because activation energies for radical reactions are typically small, and contamination and segregation are minimized by keeping the surface 'capped' by adsorbed intermediates and working under ultraclean conditions. Fluorine atoms are generated by thermal dissociation in a hot tube and abstract hydrogen atoms from precursor molecules injected immediately downstream of the source, generating radicals with complete chemical specificity. Preliminary results on growth of diamond films using the new method are presented.

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Document Details

Document Type
Technical Report
Publication Date
Jun 29, 1992
Accession Number
ADA252873

Entities

People

  • M. P. D'evelyn
  • R. E. Rawles
  • T. I. Hukka

Organizations

  • Rice University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Atomic Layer Epitaxy
  • Chemical Vapor Deposition
  • Chemistry
  • Collisions
  • Desorption
  • Electron Energy
  • Energy Consumption
  • Epitaxial Growth
  • Heat Of Activation
  • Mass Spectra
  • Materials
  • Military Research
  • Spectra
  • Spectroscopy
  • Vacuum
  • Vapor Deposition

Readers

  • Combustion science or combustion engineering.
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology