Large Signal Characterization and Modeling of Heterojunction-Bipolar Transistors

Abstract

The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation , and cutoff regions, with temperature effects included. This model has been implemented in a commercial harmonic balance simulator LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1992
Accession Number
ADA253011

Entities

People

  • C. J. Wei
  • D. S. Whitefield
  • James C. M. Hwang

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Analyzers
  • Bipolar Junction Transistors
  • Circuits
  • Compound Semiconductors
  • Electrical Engineering
  • Electronics Laboratories
  • Engineering
  • Equivalent Circuits
  • Frequency
  • Heterojunction Bipolar Transistors
  • Measurement
  • Repetition Rate
  • Semiconductors
  • Test Equipment
  • Thermal Resistance
  • Transistors

Fields of Study

  • Physics

Readers

  • Control Systems Engineering.
  • Semiconductor Device Technology