Spectroscopic Differential Reflectance as an Analytical Probe for Microelectronic Processing
Abstract
It is important in microelectronics to be able to measure damage and monitor processing during or following the many different processes. To this end, a simple and universal technique is desirable. In this paper differential reflectance, DR, is examined as a tool for studying several processes including implantation, preamorphization, solid phase epitaxy, and rapid thermal annealing. DR is found to be able to measure small differences between samples, and the amount of damage is qualitatively assessed by the intensity and broadening of the silicon interband transitions. More quantitative information about damage layer thickness can be obtained if interference bands are present. DR results were in good agreement with transmission electron microscope, TEM, findings, and in some cases DR spectra suggested residual damage where TEM found annealing to be complete. Preamorphized samples had different interband transition peak broadening and responded differently to annealing compared to their non-preamorphized counterparts. Distinctive DR spectra features were also obtained for heavily doped silicon samples, and the features were related to dopant species size.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 1992
- Accession Number
- ADA253134
Entities
People
- Eugene A. Irene
- G. E. Mcguire
- S. Chevacharoeukul
- T. M. Burns
Organizations
- University of North Carolina at Chapel Hill