Pre-Oxidation Anneal Kinetics: Interface Degradation of Thin SIO2 Films on Silicon
Abstract
The high temperature anneal of hydrogen terminated silicon has been shown to etch and roughen its surface. We attempt to describe the degree of this roughness and the time scale on which it occurs using several electrical measurements: excess direct tunneling currents, dielectric breakdown and the oscillations in the Fowler-Nordheim tunneling currents. From these results we draw conclusions on the time and water content dependence of pre-oxidation annealing on the microroughness of the Si/SiO2 interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 1992
- Accession Number
- ADA253142
Entities
People
- Eugene A. Irene
- J. C. Polar
Organizations
- University of North Carolina at Chapel Hill