A New Ellipsometry Technique for Interface Analysis: Application to Si- SiO2

Abstract

In this paper we report a new spectroscopic ellipsometry technique that overcomes much of the ambiguity associated with measuring an interface under a film. For this technique we match the refractive index of the overlayer with an immersion liquid and then perform spectroscopic ellipsometry at several angles of incidence, Essentially, the overlayer is optically (not physically) removed, thereby rendering the ellipsometric measurement sensitive to the interfacial layer which is often known to be optically and chemically different than either substrate or film. The Si-SiO2 interface resulting from thermal oxidation of Si, and the evolution of the interface with annealing is studied using the new technique.

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Document Details

Document Type
Technical Report
Publication Date
Jul 13, 1992
Accession Number
ADA253143

Entities

People

  • Eugene A. Irene
  • V. A. Yakovlev

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Angle Of Incidence
  • Annealing
  • Carbon Tetrachloride
  • Chemistry
  • Electron Microscopy
  • Films
  • Geometry
  • High Temperature
  • Measurement
  • Military Research
  • North Carolina
  • Optical Materials
  • Optical Properties
  • Oxidation
  • Personal Information Managers
  • Refractive Index
  • Substrates

Readers

  • Computer Vision.
  • Thin Film Deposition Science.