Novel Charge Integrating Pulsed I(V) Technique: A Measurement of Fowler- Nordheim Currents through Thin SiO2 Films

Abstract

The design, characterization and applications of a novel charge integrating pulsed current-voltage I(V) measurement are described. Tunneling transport through thin metal-oxide-semiconductor (MOS) capacitors is measured over ten orders of magnitude of current. Short pulse widths (<l us), allow electrical characterization of these films under high current densities, without significant charge injection. A study of the quantum interference of electrons during Fowler-Nordheim (FN) conduction, is used to illustrate the measurement.

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Document Details

Document Type
Technical Report
Publication Date
Jul 13, 1992
Accession Number
ADA253144

Entities

People

  • Eugene A. Irene
  • J. C. Polar
  • W. S. Woodward

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acquisition
  • Algorithms
  • Chemistry
  • Conduction Bands
  • Current Density
  • Data Acquisition
  • Displacement
  • Energy Bands
  • Field Effect Transistors
  • Measurement
  • Metal Oxide Semiconductors
  • Military Research
  • North Carolina
  • Personal Computers
  • Resistance
  • Semiconductors
  • Steady State

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • ballistics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing