Long Wavelength Multiple Quantum Well Lasers for High-Speed Modulation Applications
Abstract
The goal of this work is the fabrication of quantum well lasers capable of being modulated at high speeds. The intrinsic laser resonance response and parasitic electrical effects combine to limit laser speed. The high gain-slope of multiple quantum well structures was used to overcome the first problem, that is, the fabricated lasers had InGaAsP/InP active regions. Low- pressure MOVPE was used to fabricate the devices. The goal was to design a laser that emits at 1.3 microns, which is the optional wavelength for fiber-optic communications. The first devices fabricated had high threshold current and low efficiency, but they confirmed the accuracy of the chosen model. An eight quantum well structure was chosen to minimize the deleterious effects of damping on the laser's frequency response. The final deliverable product had a threshold current of 10MA and an output power of 20mW. It operated out to 8 GHz and up to 100 deg C. It is believed diffusion capacitance from the leakage current limits frequency response.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1992
- Accession Number
- ADA253348
Entities
People
- A. K. Wood
- D. J. Robbins
- R. M. Ash