Quantum Well Wires and Boxes Superstructures: Microprocessing and Characterization

Abstract

The research was aimed at producing quantum wire superlattices with dimensions below 10nm by directly using molecular beam epitaxy. Two(2D) and three dimensional (3D) carrier confinement is achievable relatively easily when the confinement length scale is larger than 100 nm. This is the dimensional range of the so called mesoscopic devices. All the technologies which permit this mesoscopic regime are based on lithography (electrons or ions) processing which will be used for producing a depletion layer or a lateral band gap modulation with a strain field. Unfortunately the interesting effects associated with the presence of a superlattice and quantization are not found until the structure dimensions are well below the 50nm range. There are presently few processing techniques which will permit reaching these dimensions.

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Document Details

Document Type
Technical Report
Publication Date
Aug 14, 1991
Accession Number
ADA253435

Entities

People

  • P. M . Petroff

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electrons
  • Engineering
  • Epitaxial Growth
  • Ion Beams
  • Materials
  • Materials Science
  • Molecular Beam Epitaxy
  • Optical Properties
  • Quantum Wells
  • Quantum Wires
  • Semiconductors
  • Three Dimensional
  • Two Dimensional

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing