Post-Nucleation Heteroepitaxy in Poorly Lattice Matched Systems
Abstract
We have investigated the evolution of thin film structures in the earlier stages of film growth. We have also investigated epitaxial grain growth as a new method for obtaining epitaxial films in poorly lattice-matched systems. We have shown that the As(4) to Ga flux ratio can greatly affect the growth morphology of epitaxial GaAs islands on silicon, and that lower than conventionally used ratios can lead to initial layers and thicker films with greatly improved electronic properties. We have also demonstrated that grain growth in polycrystalline films on single crystal substrates can lead to very thin epitaxial films of higher quality than can be obtained by other techniques. We have also shown that epitaxial grain growth can be used to establish the true low energy configuration of a continuous thin film, which can differ from the orientation obtained in conventional epitaxy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 06, 1992
- Accession Number
- ADA253484
Entities
People
- Carl V. Thompson
Organizations
- Massachusetts Institute of Technology