Development of Stable Metallization Systems
Abstract
Shallow Si n+p junctions equipped with a reactively sputtered Ta36Si14N50 amorphous metallic diffusion barrier of about 100 nm thickness have survived, without a detectable degradation of their reverse current, a 30 min long vacuum annealing test of 700 deg C with Al (Al melts at 660 deg C), 750 deg C with Au, and 950 deg C with Cu. For all three metallizations, these temperatures are records that much surpass any previously known results. This same Ta-Si-N film also acts as an excellent conducting annealing cap for GaAs. Implications of these findings are briefly discussed. A list of collaborators and of papers acknowledging the support of this contract are given.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 29, 1992
- Accession Number
- ADA253569
Entities
People
- Marc-a. Nicolet
Organizations
- California Institute of Technology