Growth Defects in Diamond Films
Abstract
Growth defects in diamond films grown by plasma-assisted chemical vapor deposition (CVD) were studied by high resolution electron microscopy. Several features of the microstructure were resolved and their importance to the growth of the diamond film was evaluated. The observations included various twin boundaries of the type sigma=3 as well as sigma=9, sigma=27 and sigma=81, which form by an interaction of lower order twins. These higher order boundaries, are loci of intersection points of growing planes on two adjacent twins and can serve as an indicator for the local crystal growth direction. The central nucleation site for the growing planes in many cases can be traced back to a quintuplet twin point. A twin quintuplet has five reentrant angles and thus serves as a preferred nucleation site for new planes as the crystal grows.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 09, 1992
- Accession Number
- ADA253618
Entities
People
- A. Feldman
- D. Shechtman
- E. N. Farabaugh
- J. L. Hutchison
- L. H. Robins
Organizations
- National Institute of Standards and Technology