Epitaxial Growth and Dopant Incorporation in Diamond: Surface/Interface Studies based on Synchrotron Radiation
Abstract
We summarize our experimental studies of the microscopic structure of diamond. We have used Angle Resolved Photo-Electron Spectroscopy (ARPES) to study the electronic structure of the reconstructed (111) 2 x 1 surface and the clean (110) surface which might be topologically similar. We confirm the Pandey pi-bonded structure, of the (111) 2 x 1 surface and find that the clean (I 10) surface is distinct from the ideal structure. Extended x-ray absorption fine structure (EXAFS) measurements of diamond and graphite demonstrate the applicability of the standard spherical-wave EXAFS analysis in low Z (atomic number) systems such as diamond. This work provides the basis for future Surface EXAFS (SEXAFS) measurements of the local structure of dopants and impurities in/on diamond. Collaboration with M. Geis at MIT Lincoln Labs resulted in an electrical measurement study of the silicon oxide-NEA (negative electron affinity) diamond interface. We showed that there is no electrostatic barrier to electron emission into SiO2 from the diamond conduction band.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1992
- Accession Number
- ADA253636
Entities
People
- B. B. Pate
- I. Lindau
- William E. Spicer
Organizations
- Stanford University