Spatial Light Modulators with Arbitrary Quantum Well Profiles
Abstract
This is the year 2 technical report for the University Research Initiative (URI) program "Spatial Light Modulators with Arbitrary Quantum Well Profiles." During the second year of the program we have continued to optimize optical modulator design, growth, and fabrication. A new method for self-consistent solution of Schrodinger and Poisson equations was developed and used to predict modulator active region performance and vertical cavity surface emitting laser device performance. A comprehensive comparison of asymmetric triangular quantum wells (ATQW) using GaAs/AlGaAs, InGaAs/GaAs, and InGaAs/AlGaAs showed InGaAs/AlGaAs quantum wells to have the highest optical efficiency. A MBE compositional grading technique was used to achieve record narrow photoluminescence linewidths for nonrectangular quantum wells. Bragg reflectors for use in Fabry Perot modulators were measured in-situ by spectroscopic ellipsometry (SE). Advances were made in the growth and fabrication of p-i-n optical modulators, including the development of via hole etching through the substrate for transmission mode modulators. A simple variational method for calculating excitonic properties in quantum confined structures with arbitrary potential profiles in the presence of applied electric and magnetic fields were developed and applied to the study of energy levels of hydrogenic impurities. Also a new theory of radiative transition linewidths due to alloy disordering in semiconductor alloys has been presented and applied to AlGaAs and InGaP bulk alloys. GaAs (Gallium Arsenide), Quantum Well, Excitons, InGaAs (Indium Gallium Arsenide), Spatial Light Modulators, AlGaAs (Aluminum Gallium Arsenide), MBE (Molecular Beam Epitaxy).
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 03, 1992
- Accession Number
- ADA253637
Entities
People
- George N. Maracas
- Krishan K. Bajaj
Organizations
- Arizona State University