Novel Optoelectronic Devices Based on Combining GaAs and InP on Si

Abstract

We have concentrated on the application of the shadow masked growth technique to the fabrication of optoelectronic devices. We have shown the fabrication of GaAs/AlGaAs and InP/InGaAsP (strained) QW multi-wavelength laser arrays and the use of SMG for the integration of a passive and active waveguiding section in GaAs based materials. On the n-doped substrate (with the shadow mask( we have deposited a 500nm n-doped lower InP cladding layer and an undoped active region consisting of 4 InGaAs strained quantum wells with InGaAsP barriers and separate confinement layers.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1992
Accession Number
ADA253781

Entities

People

  • Piet Demeester

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Arrays
  • Crystal Growth
  • Emission
  • Emission Spectra
  • Fabrication
  • Laser Arrays
  • Laser Diodes
  • Lasers
  • Low Voltage
  • Materials
  • Metal Contacts
  • Modulators
  • Optoelectronic Devices
  • Quantum Wells
  • Spectra
  • Substrates
  • Wavelength Division Multiplexing

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing