Improved Gallium Nitride and Aluminum Nitride Electronic Materials
Abstract
This report describes the progress in the first year of a three-year program to improve the quality of gallium and aluminum nitride electronic materials. In this period the experimental apparatus for the ultrahigh vacuum characterization of nitride growth processes was upgraded to increase the capability for experimental control and characterization of growth surfaces. These improvements include the addition of a cooled atomic hydrogen source and a reverse view LEED apparatus. Vibrational studies of the methyl radical on Si(100) surfaces were completed, increasing the understanding of the kinetics and stability of this radical, important for understanding growth from alkyl precursors. Cathodoluminescence and infrared reflectometry measurements were performed on numerous samples of epitaxial aluminum nitride to build up a base for materials quality determination.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 20, 1992
- Accession Number
- ADA253785
Entities
People
- John Yates
- Karl-heinz Bornschauer
- R. P. Devaty
- W. D. Partlow
- W. J. Choyke