An Accurate and Efficient Method to Calculate the Rate of Single Event Upsets from the LET Spectrum and SEU Cross Section Test Results
Abstract
A specific implementation is presented for calculating the rate of single event upsets in microelectronic devices. The implementation is based on the method of Pickel and Blandford (1980), who combined device test results, the flux distribution of particles in the space environment, and a model for the geometry of the device. The device test data are summarized as an upset cross section expressed as a function of the linear energy transfer (LET). The flux distribution of particles in the environment is described by an integral LET spectrum. The device geometry model is that of a solid rectangular prism. A numerical integration of the LET spectrum and path length distribution in the solid over the upset cross section is performed to obtain the resultant upset rate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 20, 1992
- Accession Number
- ADA253917
Entities
People
- A. E. Williamson
- D. L. Chenette
- T. L. Schumaker
Organizations
- Lockheed Martin Missiles and Space