High Sensitivity Probes for Silicon VLSI Internal Node Testing

Abstract

This contract investigated several new technologies useful for real- time internal node probing of VLSI integrated circuits. Electro-optic, electroabsorptive, photoconductive, and magnetic probe technologies were studied, and their relative merits and drawbacks compared. Testing parameters were less than or equal to 5ns temporal resolution, less than or equal to 50 mV sensitivity, and less than or equal to 2 spatial resolution. Both theoretical and experimental work was performed. Conclusions are drawn indicating the most promising candidates for future in-depth studies.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1992
Accession Number
ADA253924

Entities

People

  • Janis A. Valdmanis

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Detectors
  • Electro-Optic Modulators
  • Frequency
  • Geometry
  • Laser Beams
  • Laser Diodes
  • Lasers
  • Lithium Tantalates
  • Magnetic Fields
  • Materials
  • Measurement
  • Modulation
  • Optical Properties
  • Piezoceramics
  • Quantum Wells
  • Semiconductors
  • Waveforms

Readers

  • Electrical Engineering
  • Optical Physics and Photonics.
  • Systems Analysis and Design