Improvement and Analysis of the Radiation Response of RADFET Dosimeters
Abstract
This is the Final Report on the preparation of three lots of improved RADFET dosimeter devices with the partial support U.S. Army Contract No. DAJA45-90-C-0042 and scientific collaboration from CECOM personnel visiting the UK, including radiation testing of RADFET samples. A silicon RADFET wafer fabrication run was made and tests of performance under irradiation were made, including a pulsed X-ray test as guests of the UK Ministry of Defence, correlated with tests on a Co-60 gamma therapy source and copper tube X-rays. A new design of chip carrier was evaluated and found to be a useful advance in dosimeter packaging technique. The thickest oxide grown was 1.24 micro-meters. This had high responsivity and was very stable. The Army decided to have chips from these wafers packaged for the second and third deliveries.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1992
- Accession Number
- ADA254115
Entities
People
- Andrew G. Holmes-siedle