Single Liquid Source Plasma Enhanced Metalorganic Chemical Vapor Deposition of YBa2Cu3O7-x Thin Films

Abstract

High quality YBa2Cu3O7-x films were grown in-situ on LaA103 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd)n, (thd = 2,2,6,6- tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7-x was formed in-situ at a substrate temperature 680 deg C. The as-deposited films exhibited a mirror-like surface, had transition temperature Tco = 89 K, Delta Tc < 1K, and Jc(77K) = 106 A/cm2.

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Document Details

Document Type
Technical Report
Publication Date
Jul 29, 1992
Accession Number
ADA254119

Entities

People

  • Jiming Zhang
  • John Steinbeck
  • Peter S. Kirlin
  • Robert W. Boerstler
  • Robin Gardiner

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Diffraction
  • Films
  • Flow Rate
  • Materials
  • Measurement
  • Phase
  • Radiation
  • Substrates
  • Thin Films
  • Transition Temperature
  • Transitions
  • Vapor Deposition
  • X Rays
  • X-Ray Diffraction

Readers

  • Combustion science or combustion engineering.
  • Materials Science and Engineering.
  • Solar Photovoltaics and Thermoelectric Devices.