Development of a Liquid Phase Epitaxial Growth System for Fabrication of Indium Phosphide Based Devices

Abstract

We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1991
Accession Number
ADA254570

Entities

People

  • Kenneth Vaccaro
  • Michael Gregg

Organizations

  • Rome Laboratory

Tags

DTIC Thesaurus Topics

  • Chemistry
  • Crystal Growth
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Fabrication
  • Films
  • Gallium Arsenides
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Materials
  • Phase
  • Semiconductors
  • Standards
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Instructional Design and Training Evaluation.
  • Semiconductor Device Technology