Synthesis and Properties of Mismatched Heterojunction/Substrate Interfaces
Abstract
Unstrained In(x),Ga(1-xA)s and InyAl(1)-yAs layers and heterostructures lattice matched to each other but mismatched with respect to their GaAs substrates were grown by molecular beam epitaxy using compositionally step graded buffer layers to relax the mismatch strain by more than 90% and their structure, composition, electrical and optical properties were investigated. For x = 0.3 the buffer layer is stabilized by dislocation loops. Two-dimensional electron gas in modulation doped heterostructures exhibit a 300 K mobility rising from 9X10(3) cm2/V-s for x = 0.3 to 1.1X10(4) cm2/V-s for x = 0.45 and an estimated conduction band offset, Delta E(c) - 0.67 times the bandgap difference between the quantum well and the barrier layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1992
- Accession Number
- ADA254577
Entities
People
- Harry H. Wieder
Organizations
- University of California, San Diego