MMIC GaAs Bonding Investigation

Abstract

Results of an investigation into methods of applying thin film technology to improve Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) fabrication and packaging technologies are discussed. Progress in parallel research efforts to better understand the bonding of III-V compounds to substrates, to develop novel thin film deposition methods, and to design and synthesize new source compounds for III-V materials are reported. Techniques investigated include graphoepitaxy, upside-down structures, Ti bonding layers between metal and ceramic, and metal-organic chemical vapor deposition. The resulting interfaces of thin films and bulk materials were characterized in situ, where possible, by spectroscopic and diffraction analysis. A number of significant Rama spectra are provided.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1992
Accession Number
ADA254773

Entities

People

  • H. Brumberger
  • J. A. Schwarz
  • J. Chaiken
  • J. T. Spencer
  • P. A. Dowben
  • R. W. Vook

Organizations

  • Syracuse University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystals
  • Diffraction
  • Electronics Laboratories
  • Fabrication
  • Lasers
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Monolithic Microwave Integrated Circuits
  • Scattering
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene