GaAs Gate Dynamic Memory Technology

Abstract

During the course of this work the charge storage times of isolated GaAs pn-junction storage capacitors was increased from 20 minutes to over 10 hours at room temperature. This was accomplished through a combination of improved epitaxy, device processing, and device structure. Furthermore complete DRAM cells were demonstrated using JFET-, MESFET-, MODFET-, and HBT-access transistors. The research supported by this contract has resulted in 21 journal publications and 18 conference papers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1992
Accession Number
ADA254801

Entities

People

  • James A. Cooper Jr.
  • Michael R. Melloch

Organizations

  • Purdue University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Structure
  • Electron Microscopes
  • Electronics Laboratories
  • Energy Transfer
  • Field Effect Transistors
  • Lasers
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • P-N Junctions
  • Power Electronics
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology