VLSI Reliability Research

Abstract

Aggressive scaling toward submicron VLSI technologies has greatly heightened the need for a better basic understanding of the reliability failure mechanisms and the need for better testing methods and technological solutions. This project researched these issues for the four leading failure models of VLSI systems: oxide wearout, radiation effects, hot-electron-induce degradation, and interconnect and contact electromigration. We have developed quantitative physical (not simply empirical) models for the failure mechanisms, more accurate methods for testing, screening and reliability prediction, and explored promising new technologies for improved VLSI reliability. Many of the research results have already been accepted and used by the semiconductor industry.

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Document Details

Document Type
Technical Report
Publication Date
Aug 06, 1992
Accession Number
ADA254883

Entities

People

  • Chenming Hu

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accelerated Testing
  • Circuits
  • Degradation
  • Electronic Components
  • Electronics Industry
  • Electronics Laboratories
  • Electrons
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Integrated Circuits
  • Low Voltage
  • Metal Oxide Semiconductors
  • Oxides
  • Semiconductors
  • Silicon Dioxide
  • Simulators
  • Test Methods

Fields of Study

  • Engineering

Readers

  • Inertial Navigation Systems.
  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics