Growth of Solid Solutions of Aluminum Nitride and Silicon Carbide by Metalorganic Chemical Vapor Deposition

Abstract

We report the growth of solid solutions of (AlN)x(SiC)1-x over the entire composition range from x=0.1 to x=0.9. We believe this is the first report of solid solution of (AlN)x(SiC)1-x by metal organic vapor deposition. Growth was performed in a low pressure vertical reactor using the silane-propane-ammoniatrimethylaluminium-hydrogen gas system on both silicon and silicon carbide substrates. Growth temperatures were between 1200-1250 deg C and growth pressures varied between 10 and 76 Torr. The composition of the solid solutions were strongly dependent on system pressure.

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Document Details

Document Type
Technical Report
Publication Date
Aug 27, 1992
Accession Number
ADA255000

Entities

People

  • I. Jenkins
  • K. G. Irvine
  • M. G. Spencer
  • N. Chen
  • V. Dmitriev

Organizations

  • Howard University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Carbides
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electron Spectroscopy
  • Electrons
  • High Electron Mobility Transistors
  • Materials
  • Materials Science
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Solid Solutions
  • Substrates
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.