III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides

Abstract

Measurements of the hole density in heavily carbon-doped GaAs and A1x,Gal-xAs as a function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures (T < 550 deg C). However, higher annealing temperatures (T > 600 deg C) result in a reduction of the hole concentration reaching a maximum carrier concentration of = 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms: (1) the passivation of carbon acceptors by hydrogen incorporated during growth; and (2) the change in the lattice site location of carbon atoms, which is dependent on the total carbon concentration.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1992
Accession Number
ADA255239

Entities

People

  • G. E. Stillman
  • K. C. Hsieh
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Electrical Engineering
  • Electron Microscopy
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Geometry
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Refractive Index
  • Semiconductor Lasers
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing