Reliability of Sol-Gel Derived Ferroelectric Memories

Abstract

A process was developed to prepare PZT(52/48) precursor solutions. Five spin-on depositions of this solution (0.5M) were necessary to grow 0.5 micron thin films of polycrystalline PZT onto PT passivated silicon wafers. An addition of 15% excess Pb0 aided the densification process. Films derived from l.5M solutions resulted in PZT films of equivalent thickness in only two depositions. Dielectric constant and tan Sigma were 800 and 2% respectively, at 1 kHz. Remnant and saturation polarizations were 12 and 25 micron C/cm2, respectively. Coercive fields of 36-48 kv/cm were measured. From retention experiments, a polarization loss of 11.2% after 3.2 years was estimated (i.e., the switched charge would diminish from 5.8 to 5.2 AC/CM2). High frequency pulse fatigue data on Nb and Sn modified PZT showed a reduction of the switched charge of 26% after 4x,10 12 polarization reversals.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADA255240

Entities

People

  • Sandwip K. Dey

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitors
  • Curie Temperature
  • Dielectric Permittivity
  • Domain Walls
  • Electron Microscopy
  • Films
  • Frequency
  • Ionizing Radiation
  • Materials
  • Materials Engineering
  • Polarization
  • Precursors
  • Reliability
  • Thin Films
  • Transition Temperature
  • Transmission Electron Microscopy
  • X Rays

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics
  • Semiconductor Device Technology