Gate-All-Around Device
Abstract
The gate-all-around device is an SOI MOS field-effect transistor. The gate electrode and the thin gate oxide are wrapped around the active channel region. No other insulator (field oxide or buried oxide) is in contact with the active region of the device. The gate-all-around device exhibits a high transconductance (up to 4 times that of a normal SOI transistor), an ideally sharp subthreshold slope, and demonstrates the concept of volume inversion in the SOI films. Both n-channel and p-channel devices have been fabricated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 04, 1992
- Accession Number
- ADA255287
Entities
People
- J. P. Colinge
- P. Smeys