Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications
Abstract
To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 22, 1992
- Accession Number
- ADA255363
Entities
People
- Gregory E. Stillman
- James. J. Coleman
- Nick Holonyak Jr.
Organizations
- University of Illinois Urbana–Champaign