ALE Project
Abstract
Using alternating exposures of Si2H6 and Si2C16, very thin Si layers have been grown on the Si(100) surface at temperatures (T) as low as 475 deg C. Although this growth method is not truly self-limiting, some of the desired features for Si atomic layer epitaxy (ALE) are retained, as discussed here. The growth rate of new Si on Si(100) using this method is limited by the thermal desorption of H2 and HC1. Doping the surface with boron atoms can lower the growth temperature, due to a weakening of the Si-H and Si-Cl bonds on the surface as observed in the temperature programmed desorption results from H2, HC1 and SiC12 desorption from the clean and the boron-doped Si(100) surfaces.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1992
- Accession Number
- ADA255369
Entities
People
- F. J. Himpsel
- F. R. Mcfeely
- S. M. Gates
- Subramanian S. Iyer
- T. O. Sedgwick
Organizations
- IBM Thomas J. Watson Research Center