Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment
Abstract
Atomic layer Epitaxy (ALE) of Si has been demonstrated by using remote He plasma low energy ion bombardment to desorb H from a H-passivated Si(100) surface at low temperatures and subsequently chemisorbing Si2H6 on the surface in a self-limiting fashion. Si substrates were prepared using an RCA clean followed by a dilute HF dip to provide a clean, dihydride-terminated (1 x 1) surface, and were loaded into a Remote Plasma Chemical Vapor Deposition (RPCVD) system in which the substrate is downstream from an r-f noble gas(He or Ar) glow discharge in order to minimize plasma damage. An in situ remote H plasma clean at 250 deg C for 45 min. was used to remove surface 0 and C and provide an alternating monohydride and dihydride termination, as evidenced by a (3 x 1) RHEED pattern. It was found necessary to desorb the H from the Si surface to create adsorption sites for Si bearing species such as Si2H6. Remote He plasma bombardment for 1-3 min. was investigated over a range of temperatures (250 deg C-410 deg C), pressures (50-400 mTorr) and r-f powers (6-30 W) in order to desorb the H and convert the (3 x 1) RHEED pattern to a (2 x 1) pattern which is characteristic of either a monohydride termination or a bare Si surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 1992
- Accession Number
- ADA255763
Entities
People
- A. Mahajan
- A> Tasch
- D. Kinosky
- J. Irby
- R. Qian
- S. Thomas
- Srutarshi Banerjee
- Tom Picraux
Organizations
- University of Texas at Austin