Fast Optoelectronic Switching Processes in Surface-Emitting Semiconductor Lasers and Nonlinear Etalons
Abstract
We describe theoretical and experimental research on optoelectronic switching processes in GaAs/AlGaAs multiple quantum well etalons, where the quantum wells are spaced by one half the optical wavelength at which the structure is designed to operate. Results have been obtained with the quantum wells pumped above threshold (i.e. the structure behaves as a surface-emitting laser) and below threshold (when it behaves as a saturable absorber with feedback). In the former case, high-speed (10 ps impulse response) switching has been demonstrated, but the threshold is relatively high. Some suggestions for more efficient switching are made. In the latter case, a detailed theoretical model has been developed which demonstrates the potential advantages and disadvantages of absorptive bistable optical switching in half-wave-periodic MQW etalons over the conventional non-resonant MQW or bulk structures. The initial experiments were promising but hampered by materials growth and uniformity problems. We include several specific recommendations for additional experiments to complete our investigations of the below threshold switching regime, as well as extension to 2-D switch arrays, new research directions and applications such as time-division multiplexing. Surface-emitting lasers, bistable optical switches, III-V semiconductor quantum well devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1992
- Accession Number
- ADA255802
Entities
People
- John. G. Mcinerney
Organizations
- University of New Mexico