Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMs

Abstract

We report the results of experiments designed to evaluate the extent to which focused electron-beam pulses simulate energetic ion upset phenomena in GaAs memory circuits fabricated by the McDonnell Douglas Astronautics Company. The results of two experimental methods were compared, irradiation by heavy-ion particle beams, and upset mapping using focused electron pulses. Linear energy transfer (LET) thresholds and upset cross sections are derived from the data for both methods. A comparison of results shows good agreement, indicating that for these circuits electron-beam pulse mapping is a viable simulation technique.

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Document Details

Document Type
Technical Report
Publication Date
Jul 16, 1992
Accession Number
ADA255901

Entities

People

  • L. D. Flesner
  • R. Zuleeg
  • W. A. Kolasinski

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Astronautics
  • Availability
  • Circuits
  • Classification
  • Corporations
  • Cyclotrons
  • Electron Beams
  • Electrons
  • Field Effect Transistors
  • Ions
  • Particles
  • Security
  • Simulations
  • Space Systems
  • Transistors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster