Experimental Considerations of Higher Order Parametric X-Rays from Silicon Crystals of Varying Thicknesses
Abstract
Generation of parametric x-radiation (PXR) may be described as the Bragg scattering of virtual photons to produce real x-rays which satisfy the Bragg condition N lambda = 2d sin theta sub B where theta sub B is the angle between the electron beam and the crystal plane. Enhanced higher order parametric s-radiation from the <220> and the <111> planes of silicon crystals of varying thicknesses were observed, Production of PXR of order n=1 for both planes of a 20 u m thick crystal and orders n=1, and n=2 of the <220> and the n=1, n=3, and n=4 of the <111> planes of the 44 microns and 320 microns crystals were observed. Exploiting the formation and attenuation lengths of silicon crystals of varying thicknesses, higher order x-ray production is enhanced relative to the lower energy first order xray. Photons of 4.5 to 21 keV have been observed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1992
- Accession Number
- ADA256082
Entities
People
- Scott R. Evertson
Organizations
- Naval Postgraduate School