Wide Band Gap Semiconductors Symposium Held in Boston, Massachusetts on 2-6 December 1991. Materials Research Society Symposium Proceedings. Volume 242

Abstract

Contents: Diamond Growth; Electronic Properties of Diamond and Related Devices; IV-VI Compounds; Theory of Wide Band-Gap Semiconductors; III-V Nitrides and Other III-V Compounds; Silicon Carbide; Boron Nitride and other Boron Compounds; Amorphous and Micro-Crystalline Semiconductors; Chalcopyrites, Oxides, and Halides.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1992
Accession Number
ADA256154

Entities

People

  • J. I. Pankove
  • T. D. Moustakas
  • Y. Hamakawa

Organizations

  • Boston University

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies
  • Ground and Sea Platforms
  • Sensors

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Synthesis
  • Chemistry
  • Crystal Structure
  • Crystallography
  • Crystals
  • Electronics Industry
  • Electronics Laboratories
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Measurement
  • Modules (Electronics)
  • Optics
  • Power Electronics
  • Semiconductors
  • Thermodynamics

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene