Photoelectrochemistry of Electronic and Electro-Optical Materials
Abstract
The broad objective of this work is to investigate applications of photoelectrochemistry to semiconductor and electro-optical technology. Experiments are being undertaken to understand the functions of reaction velocity and crystallographic orientation in determining profiles and morphologies of photoelectrochemically etched features in Si, SiC and III-V compounds. Work was also conducted to determine the relationship between liquid junction response and solid state diode electrical characteristics of the polar faces of III-V crystals and to develop chemical surface passivants for compound semiconductor device electronics. Gratings, Etching, Photoelectrochemistry, Semiconductor, Processing, GaAs, Sic.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1992
- Accession Number
- ADA256239
Entities
People
- R. D. Rauh