Unique Hydride Chemistry on Silicon - PH3 Interaction with Si(100)-(2x1)
Abstract
The dissociative adsorption of phosphine (PH3) on Si(1 00)-(2x1) and its high temperature thermal behavior have been studied by high-resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy (AES) and by temperature programmed desorption (TPD). Phosphine adsorbs dissociatively onto Si(100)-(2x1) at 100 K as PH2 and H species, as revealed by vibrational bands at 1050 cm/1 (Delta sub sc(PH2)) and 2100 cm-/1(v(Si-H)). The PH2(a) undergoes thermal decomposition to adsorbed P and H near 650 K, as determined by HREELS. TPD measurements reveal two PH3 desorption processes at 485 and 635 K. The 635 K-desorption is shown to result from PH2 + H recombination, while the mechanism for the 485 K-desorption cannot be definitively identified. Additionally, two H2 desorption states were observed at 685 and 770 K. Comparison of these features with H2 desorption from clean and phosphorus- modified silicon Indicates that the 685- and 770 K-H2 desorption kinetics are controlled by thermal dissociation of adsorbed PHx species which supply hydrogen to the surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1992
- Accession Number
- ADA256774
Entities
People
- J. T. Yates Jr.
- M. L. Colaianni
- P. J. Chen
Organizations
- University of California, Davis