Growth on the Reconstructed Diamond (100) Surface

Abstract

A thermochemical kinetics analysis has been carried out for growth on the (100)-(2xl):H diamond surface using a pair of previously proposed mechanisms which operate sequentially. Half of the growth on such a surface is accounted for by insertion into dimer bonds, while the other half is accounted for by addition across troughs between dimer bonds. The latter mechanism is slower and therefore controls the over-all growth rate on this surface. This result can explain the success that the latter mechanism has had in predicting growth rates in a variety of systems. We suggest that growth at step sites is favored on steric and thermochemical grounds and can account for atomically smooth surfaces on diamond.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1992
Accession Number
ADA256954

Entities

People

  • D. G. Goodwin
  • S. J. Harris

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Chemical Compounds
  • Chemical Kinetics
  • Chemical Vapor Deposition
  • Chemistry
  • Energy
  • Engineering
  • Films
  • Jet Propulsion
  • Kinetics
  • Materials
  • Materials Science
  • Mechanical Engineering
  • Military Research
  • Molecules
  • Physical Chemistry
  • Physics

Readers

  • Mathematics or Statistics
  • Organic Chemistry
  • Thin Film Deposition Science.