RF Vacuum Microelectronics

Abstract

We summarize our fourth quarter progress towards developing a thin film edge emitter vacuum triode capable of 1 GHz modulation for sustained (>1 hour) periods of time. Current densities of up to 10 uA/um have now been measured on diode structures. Total current emission of 380 mA was measured for a thin film edge emitter diode which is a factor of 25 greater than at the start of the program. A diode array structure was designed to demonstrate the program requirements of 5 mA total current. This array is now in process. The Thin film ordered this quarter and the first fabrication run is completed and now test. Vacuum microelectronics, edge emitter, triode, high frequency devices.

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Document Details

Document Type
Technical Report
Publication Date
Oct 16, 1992
Accession Number
ADA257208

Entities

People

  • D. K. Arch

Organizations

  • Honeywell International, Inc.

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Current Density
  • Emission
  • Emitters
  • Fabrication
  • Film Resistors
  • Films
  • Frequency
  • Manufacturing
  • Materials
  • Microelectronics
  • Micromachining
  • Modulation
  • Resistors
  • Thin Film Resistors
  • Thin Films

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Nanofabrication and Microfabrication.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene