Modeling of Radiation Effects in CMOS
Abstract
In this report, we present the basic analytical MOSFET model which describes both the below and above-threshold regimes of device operation. The description is based on a change control model which uses one unified expression for the effective differential channel capacitance. The model also accounts for series drain and source resistances, velocity saturation in the channel, finite output conductance in the saturation regime, and for the threshold voltage shift due to drain bias induced lowering of the injection barrier between the source and the channel (DIBL). The model parameters, such as the effective channel mobility, the saturation velocity, the source and drain resistances, etc. are extractable from experimental data. This makes the model very suitable for incorporation into out circuit simulator, AIM-Spice. We apply the characterization procedure based on this model to a MOSFET with a quarter micron gate length and obtain excellent agreement with experimental data. The approach developed in this report was also applied for modeling other field effect transistors, such as GaAs Metal Semiconductor Field Effect Transistors and Heterostructure Field Effect Transistors. MOSFET, Simulator.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1992
- Accession Number
- ADA257236
Entities
Organizations
- University of Virginia