The International Symposium on Si-Based Molecular Beam (4th) held in Anaheim, California, on 29 April-3 May 1991

Abstract

Topics include: homoepitaxy and substrate preparation; doping; gesi growth; gesi optical properties; gesi electronic transport; device applications; epitaxial metals and insulators; novel materials and growth techniques; and light from porous silicon.

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Document Details

Document Type
Technical Report
Publication Date
Apr 14, 1992
Accession Number
ADA257241

Entities

People

  • John Ballance

Organizations

  • Materials Research Society

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Chemical Synthesis
  • Chemistry
  • Crystal Lattices
  • Electronics Industry
  • Electronics Laboratories
  • High Electron Mobility Transistors
  • Infrared Detectors
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Measurement
  • Modules (Electronics)
  • Power Electronics
  • Semiconductors
  • Transition Temperature

Readers

  • Academic Conference Management
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene