Characterization of Semi-Insulating Gallium Arsenide
Abstract
This project was established effective October 1991, to continue through September 30 1992. Its purpose has been the electrical and oprical characterization of samples from melt-grown crystals of gallium arsenide (GaAs). Almost all of the samples measured during this 12-month period were undoped (nominally undoped), and almost all samples came from crystals grown at NRL by the vertical zone melt (VZM) method. A series of technical reports during the year (when there were new results to report to NRL), plus quarterly reports submitted after 3, 6, and 9 months, provided the bulk of our information to the Crystal Growth Branch of NRL. In this Final Technical Report, a synopsis is provided of that information already submitted on a variety of dates. Measurements made at Western Washington University (WWU) under the terms of this project have been in accordance with a Statement of Work provided at the outset of the project. These include dc low-field electrical transport measurements in semi-insulating (SI) samples, as a function of temperature; observations of time dependent photoconductivity in this SI GaAs; and two types of optical transmittance measurement: in the near-infrared (near-IR) primarily for observation of absorption by EL2 defects, and in the mid-IR for observation of carbon local vibrational mode (LVM) absorption. Examples are provided in this Report of the four above-mentioned types of measurement. The WWU measurements have complemented work at NRL itself, of crystal growth under varied conditions, of low-temperature high resolution mid-IR and far-IR measurements, and of defect structure microscopic studies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1992
- Accession Number
- ADA257295
Entities
People
- John S. Blakemore
Organizations
- Western Washington University